Answer:
0.0659 A
Explanation:
Given that :
[tex]I_{0} = 6nA[/tex] ( saturation current )
at 25°c = 300 k ( room temperature )
n = 2 for silicon diode
Determine the saturation current at 100 degrees = 373 k
Diode equation at room temperature = I = Io [tex]\frac{V}{e^{0.025*n} }[/tex]
next we have to determine the value of V at 373 k
q / kT = (1.6 * 10^-19) / (1.38 * 10^-23 * 373) = 31.08 V^-1
Given that I is constant
Io = [tex]\frac{e^{0.025*2} }{31.08}[/tex] = 0.0659 A
The saturation current at 100 degrees Celsius will be "0.0659 A".
According to the question,
Saturation current, [tex]I_0[/tex] = 6nA
At 25°C,
Room temperature = 300 k
Silicon diode, n = 2
The value of V will be:
= [tex]\frac{q}{kT}[/tex]
By substituting the values,
= [tex]\frac{1.6\times 10^{-19}}{1.38\times 10^{-23}\times 373}[/tex]
= 31.08 V⁻¹
hence,
By using Diode equation,
→ I = I₀ [tex]\frac{V}{e^{0.025\times n}}[/tex]
or,
The current will be:
I₀ = [tex]\frac{V}{e^{0.025\times n}}[/tex]
= [tex]\frac{e^{0.025\times 2}}{31.08}[/tex]
= 0.0659 A
Thus the answer above is right.
Find out more information about current here:
https://brainly.com/question/25922783
